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ACE7401B - P-Channel Enhancement Mode Field Effect Transistor

Description

The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS(V)=-30V.
  • ID=-29A (VGS=-10V).
  • RDS(ON)＜13mΩ (VGS=-20V).
  • RDS(ON)＜14mΩ (VGS=-10V).
  • RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) TA=25 OC TA=100 OC Drain Current (Pulse)C Drain Current (Continuous) TA=25 OC TA=75 OC Power Dissipation B TA=25 OC TA=100 OC Power Dissipation A TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDSS -30 V VGSS ±25 V -29 ID.

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Datasheet preview – ACE7401B

Datasheet Details

Part number ACE7401B
Manufacturer ACE Technology
File Size 598.71 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet ACE7401B Datasheet
Additional preview pages of the ACE7401B datasheet.

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Full PDF Text Transcription

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ACE7401B P-Channel Enhancement Mode Field Effect Transistor Description The ACE7401B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Features  VDS(V)=-30V  ID=-29A (VGS=-10V)  RDS(ON)＜13mΩ (VGS=-20V)  RDS(ON)＜14mΩ (VGS=-10V)  RDS(ON)＜17mΩ (VGS=-5V) Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) TA=25 OC TA=100 OC Drain Current (Pulse)C Drain Current (Continuous) TA=25 OC TA=75 OC Power Dissipation B TA=25 OC TA=100 OC Power Dissipation A TA=25 OC TA=70 OC Operating and Storage Temperature Range Symbol Max Unit VDSS -30 V VGSS ±25 V -29 ID -23 IDM -60 A -12 IDSM -9.
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