The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
ADV
ADM23N06E
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS 60V
ID 23A
RDS(ON) (mΩ) 42mΩ
TO252
2
1 2 3
Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Ratings
Unit
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
60 V
±20
150
°C
-55 to 150
°C
TC=25°C
23
A
Mounted on Large Heat Sink
IDM
300μs Pulse Drain Current Tested⑴
TC=25°C
80
A
ID
Continuous Drain Current
TC=25°C
23
A
TC=70°C
18
A
PD
Maximum Power Dissipation
TC=25°C
50
W
TC=70°C
32
W
1. Pulse width limited by maximum junction temperature.
ADM23N06E Datasheet
