ADV ADM3N06B
N-Channel MOSFET
| Part No. | ADM3N06B |
|---|---|
| Datasheet | ADM3N06B Download |
| Manufacturer | ADV |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
( TA = 25°C unless otherwise specified ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current（3） TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current TC=25°C TC=25°C PD Maximum Power Dissipation（3） 1. Pulse width limited by maximum junction temperature. Thermal Characteristics Symbol Parameter RthJA Thermal resistance junction-ambient max（3） Ratings 60 ±20 150 -55 to 150 3 10 3 1.7 Ratings 73.5 Unit V °C °C A A A W Unit °C/W 1/6 Ver.0.11 ADV ADM3N06BELECTRICAL CHARACTERISTICS
(TA=25°C Unless Otherwise Noted) Symbol Parameter Test conditions On/off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) Gate Threshold Voltage Gate Leakage Current Drain-SourceOn-stateResistance⑵ VGS=0V, IDS=250uA VDS= 60V, VGS=0V VDS=60V, VGS=0V TJ=55...
