ADM3N06B - N-Channel MOSFET

Datasheet Details

Part number	ADM3N06B
Manufacturer	ADV
File Size	860.19 KB
Description	N-Channel MOSFET
Datasheet	ADM3N06B Datasheet
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ADV ADM3N06B N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 3.0A RDS(ON) (mΩ) 105mΩ SOT-23 Absolute Maximum Ratings ( TA = 25°C unless otherwise specified ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current（3） TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current TC=25°C TC=25°C PD Maximum Power Dissipation（3） 1. Pulse width limited by maximum junction temperature. Thermal Characteristics Symbol Parameter RthJA Thermal resistance junction-ambient max（3） Ratings 60 ±20 150 -55 to 150 3 10 3 1.7 Ratings 73.

Published: Sep 11, 2018 |