ADM100N10 - N-Channel MOSFET

General Description

The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications.

Key Features

Special process technology for high ESD capability.
High density cell design for ultra low RDS(ON).
100% EAS Guaranteed.
Optimized V(BR)DSS Ruggedness.
Lead-Free,RoHS Compliant 1 2 3 .

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ADM100N10 n-channel mosfet by ADV - Datasheet Preview

Datasheet Details

Part number	ADM100N10
Manufacturer	ADV
File Size	0.99 MB
Description	N-Channel MOSFET
Datasheet	ADM100N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ADV ADM100N10 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 100A RDS(ON) (mΩ) 13mΩ TO220C Features: ● Special process technology for high ESD capability ● High density cell design for ultra low RDS(ON) ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant 1 2 3 Description: The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications.