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ADM100N10 Datasheet N-channel MOSFET

Manufacturer: ADV

Overview:                         ADV     ADM100N10  N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 100V ID 100A RDS(ON) (mΩ) 13mΩ.

Datasheet Details

Part number ADM100N10
Manufacturer ADV
File Size 0.99 MB
Description N-Channel MOSFET
Datasheet ADM100N10-ADV.pdf

General Description

: The ADM100N10 uses advanced trench technology and design to provide excellent charge.lt can be used in a wide variety of applications.

RDS(ON) with low gate Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter mon Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC =25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested（2） ID Continuous Drain Current（1） PD Maximum Power Dissipation TC=25°C TC=25

Key Features

  • Special process technology for high ESD capability.
  • High density cell design for ultra low RDS(ON).
  • 100% EAS Guaranteed.
  • Optimized V(BR)DSS Ruggedness.
  • Lead-Free,RoHS Compliant 1  2  3 .

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ADM100N10 Distributor