ADM4N06A - N-Channel MOSFET

Datasheet Details

Part number	ADM4N06A
Manufacturer	ADV
File Size	540.43 KB
Description	N-Channel MOSFET
Datasheet	ADM4N06A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ADM4073	Current-Sense Amplifier	Analog Devices
ADM4168E	Dual RS-422 Transceiver	Analog Devices
ADM4210	Hot Swap Controller	Analog Devices
ADM483	Slew-Rate Limited RS-485/RS-422 Transceiver	Analog Devices
ADM483E	RS-485 Transceiver	Analog Devices

Other Datasheets by ADV

Part Number	Description
ADM40N06E	N-Channel MOSFET
ADM45N06D	N-Channel MOSFET
ADM45N06E	N-Channel MOSFET
ADM100N10	N-Channel MOSFET
ADM105N03E	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

ADV ADM4N06A N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 4.6A RDS(ON) (mΩ) 90mΩ SOT-89 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current（3） TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Continuous Drain Current PD Maximum Power Dissipation 1. Pulse width limited by maximum junction temperature. TC=25°C TC=25°C TC=70°C TC=25°C TC=70°C Thermal Characteristics Symbol Parameter RthJA Thermal resistance junction-ambient max（3） Ratings 60 ±20 150 -55 to 150 3 18.4 4.6 4 3 2.