SSC8015GS6 - P-Channel Enhancement Mode MOSFET

General Description

The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switchand battery protection applications.

Load Switch Portable Devices DCDC conversion Pin Configuration Top View

Key Features

s.
VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A.
General.

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SSC8015GS6 p-channel enhancement mode mosfet by AFSEMI - Datasheet Preview

Datasheet Details

Part number	SSC8015GS6
Manufacturer	AFSEMI
File Size	113.06 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8015GS6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8015GS6 P-Channel Enhancement Mode MOSFET  Features  VDS VGS -16V ±12V RDSon TYP 25mR@-4V5 33mR@-2V5 ID -4.5A   General Description The SSC8015GS6 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switchand battery protection applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.com 1/4 Analog Future SSC8015GS6  Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Ratings Drain-Source Voltage VDSS -16 Gate-Source Voltage Continuous Drain Current a VGS@4.5V TA = 25°C Continuous Drain Current a VGS@4.