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SSC8022GS6 - N-Channel Enhancement Mode MOSFET

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Part number SSC8022GS6
Manufacturer AFSEMI
File Size 252.61 KB
Description N-Channel Enhancement Mode MOSFET
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Description

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.Excellent thermal and electrical capabilities. Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm

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