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SSC8025GS6 - P-Channel Enhancement Mode MOSFET

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Part number SSC8025GS6
Manufacturer AFSEMI
File Size 88.78 KB
Description P-Channel Enhancement Mode MOSFET
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Description

This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. Package Information GS ③ ①② SOT23 Unit:mm SSC-4V0 http://www.afsemi.com 1/4 SSC8025GS6 Absolute Maximum Ratings @ TA = 25°C unless otherw ise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current(1)

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