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SSC8025GS6 - P-Channel Enhancement Mode MOSFET

Description

This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD.

These feathures make it suitable for use as a load switch or in PWM applications.

Package Information GS ③ ①② SOT23 Unit:

Features

  • s VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV.

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Datasheet preview – SSC8025GS6

Datasheet Details

Part number SSC8025GS6
Manufacturer AFSEMI
File Size 88.78 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8025GS6 Datasheet
Additional preview pages of the SSC8025GS6 datasheet.

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Full PDF Text Transcription

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SSC8025GS6 P-Channel Enhancement Mode MOSFET with ESD Protection  Features VDS VGS -20V ±8V RDSon TYP 50m R@-4V5 60m R@-2V5 70m R@-1V8 96m R@-1V5 ID ESD -4A 3kV  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View D  General Description This device uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.5V and it is protected from ESD. These feathures make it suitable for use as a load switch or in PWM applications.  Package Information GS ③ ①② SOT23 Unit:mm SSC-4V0 http://www.afsemi.
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