SSC8027GS6 datasheet by AFSEMI.
| Part number | SSC8027GS6 |
|---|---|
| Datasheet | SSC8027GS6-AFSEMI.pdf |
| File Size | 222.52 KB |
| Manufacturer | AFSEMI |
| Description | P-Channel Enhancement Mode MOSFET |
|
|
Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
| Part Number | Description |
|---|---|
| SSC8020GS6 | N-Channel Enhancement Mode MOSFET |
| SSC8020GS8 | N-Channel Enhancement Mode MOSFET |
| SSC8020GS9 | N-Channel Enhancement Mode MOSFET |
| SSC8022GS6 | N-Channel Enhancement Mode MOSFET |
| SSC8023GS6 | P-Channel Enhancement Mode MOSFET |
| SSC8025GS6 | P-Channel Enhancement Mode MOSFET |
| SSC8028GT3 | N-Channel Enhancement Mode MOSFET |
| SSC8028GT8 | N-Channel Enhancement Mode MOSFET |
| SSC8029GN2 | P-Channel Enhancement Mode MOSFET |
| SSC8029GS6A | P-Channel Enhancement Mode MOSFET |
