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SSC8027GS6 - P-Channel Enhancement Mode MOSFET

Description

on-state resistance.

Features

  • s VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A.

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Datasheet preview – SSC8027GS6

Datasheet Details

Part number SSC8027GS6
Manufacturer AFSEMI
File Size 222.52 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8027GS6 Datasheet
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Full PDF Text Transcription

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SSC8027GS6 P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±8V RDSon TYP 100mR@-4V5 119mR@-2V5 ID -2A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-1V0 http://www.afsemi.
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