SSC8027GS6
SSC8027GS6 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -20V
VGS ±8V
RDSon TYP 100m R@-4V5 119m R@-2V5
ID -2A
- Applications
- Load Switch
- Portable Devices
- DCDC conversion
- Pin Configuration
- General Description
Top View
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
- Package Information
D: Drain; G: Gate; S: Source
③ ①②
SOT23 Unit:mm
SSC-1V0 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
Drain Current...
