SSC8037GT4
SSC8037GT4 is Dual P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS -30V
VGS ±20V
RDSon TYP 27m R@-10V 39m R@-4V5
ID -15A
- Applications
- Load Switch
- DCDC conversion
- NB battery
- Pin configuration
- General Description
Top View
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.
- Package Information
SSC-1V0
Unit: mm TO220 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @TA = 25℃ unless otherwise noted
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Continuous TA=25°C Pulsed (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol VDSS VGSS ID IDM PD
TJ, TSTG
Limit -30 ±20 -15 -60 5
-55...
