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SSC8062GS1 - N-Channel Enhancement Mode MOSFET

General Description

SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON).

It is particularly suitable for DCDC conversion and motor driver.

Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1 Absolute

Key Features

  • s.

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Datasheet Details

Part number SSC8062GS1
Manufacturer AFSEMI
File Size 124.41 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8062GS1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8062GS1 N-Channel Enhancement Mode Power MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6A  Load Switcing;  PWM application  General Description  Pin configuration SSC8062GS1 uses advanced trench technology to provide excellent RDS(ON). It is particularly suitable for DCDC conversion and motor driver.  Package Information ⑧ ⑦ ⑥⑤ ①② ③④ SOP8 Unit:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8062GS1  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Continuous Pulse Total Power Dissipation (note1) Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in pad area.