SSC8066GS6
SSC8066GS6 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS 60V
VGS ±20V
RDSon TYP 45m R@10V 80m R@4V5
ID 3A
- Applications
- Load Switch
- Portable Devices
- DCDC Conversion
- Pin Configuration
- General Description
Top View
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
- Package Information
③ ①②
SSC-V1.0
SOT23
Units:mm http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature...
