AFSEMI SSC8066GS6
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.| Part No. | SSC8066GS6 |
|---|---|
| Datasheet | SSC8066GS6 Download |
| Manufacturer | AFSEMI |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS 60V VGS ±20V RDSon TYP 45mR@10V 80mR@4V5 ID 3A●
APPLICATIONS
● Load Switch● Portable Devices
● DCDC Conversion
● Pin Configuration
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GENERAL DESCRIPTION
Top View Excellent thermal and electrical capabilities.● Package Information ③ ①② SSC-V1.0 SOT23 Units:mm 1/4 Analog Future SSC8066GS6
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ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Rang
