SSC8066GS6 Datasheet (AFSEMI)

Part SSC8066GS6
Description N-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer AFSEMI
Size 157.81 KB
AFSEMI

SSC8066GS6 Overview

Description

Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.