SSC80A2GT1
SSC80A2GT1 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS VGS 100V ±20V
RDSon TYP 129m R@10V 130m R@4V5
ID 5A
- - General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
- Load Switch
- Portable Devices
- DCDC conversion
Pin Configuration
Top View
- Package Information
SSC-V1.0
Package :TO-92 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range
VDSS VGSS
ID IDM PD TJ, TSTG
N-channel 100 ±20 5 30 2.5
-55 to +150
Unit V V A A W °C
- Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter Drain- Source Breakdown...
