SSC8121GN1
SSC8121GN1 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS RDSon TYP
150m R@-4V5
-20V ±8V 190m R@-2V5 -1.0A
255m R@-1V8
- General Description
This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.
- Package Information
- Applications
- Load Switch
- Portable Devices
- DCDC conversion
- Pin Configuration
Top View
Bottom View
- Ordering Information
Device SSC8121GN1
DFN1006
Package DFN1006
Marking K
SSC-1V0 http://.afsemi.
Qty Per Reel 10000
1/5
Analog Future
- Absolute Maximum Ratings @TA=25℃ unless otherwise noted
Parameter Drain-Source Voltage Gate-Source...
