SSC8160GS6
SSC8160GS6 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS 60V
VGS ±20V
RDSon TYP 2R@10V 3R@4V5
ID 300m A
ESD 3k V
- - General Description
This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low threshold voltage (2V), it is ideal for portable equipment.
Applications
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers,
- Display, Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays Pin configuration
Top View
- Package Information
12 GS
③
①②
SOT23 Unit:mm
SSC-V1.0 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±20
Drain current
- Continuous
- Pulse
Total power dissipation...
