SSC8164GS6 Description
Top View D This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and 3 DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 12 Ordering Information GS Device SSC8164GS6 Marking 8164 Package SOT23 Qty per Reel 3000 Reel Size 7 Inch SSC-V1.0 http://.afsemi.