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SSC8220GT8 - N-Channel Enhancement Mode MOSFET

General Description

This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Applications Desktop Computer Notebook Pin Configuration Top View Package Information TO-252 SSC-V1

Key Features

  • s VDS VGS 20V ±12V RDSon TYP 3.5mR@10V 4.5mR@4V5 6.0mR@3V3 ID 70A.
  • General.

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Datasheet Details

Part number SSC8220GT8
Manufacturer AFSEMI
File Size 93.75 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8220GT8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8220GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 3.5mR@10V 4.5mR@4V5 6.0mR@3V3 ID 70A  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Applications  Desktop Computer  Notebook  Pin Configuration Top View  Package Information TO-252 SSC-V1.0 Units:mm http://www.afsemi.com 1/5 Analog Future SSC8220GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range VDSS VGSS ID PD TJ, TSTG Ratings 20 ±12 70 200 2.