SSC8220GT8
SSC8220GT8 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS VGS 20V ±12V
RDSon TYP 3.5m R@10V 4.5m R@4V5 6.0m R@3V3
ID 70A
- General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
- Applications
- Desktop puter
- Notebook
- Pin Configuration
Top View
- Package Information
TO-252
SSC-V1.0
Units:mm http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current Power Dissipation(1)
Continuous Pulsed
Operating and Storage Junction Temperature Range
VDSS VGSS
PD TJ, TSTG
Ratings 20 ±12 70 200 2.5
-55 to +150
Unit V V
W °C
- Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol Test Conditions
Min Typ Max Unit
Drain- Source Breakdown Voltage V(BR)DSS VGS = 0...
