| Part number | SSC8313GS1 |
|---|---|
| Datasheet | SSC8313GS1-AFSEMI.pdf |
| File Size | 197.21 KB |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
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Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Source outline surface mount package.
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