SSC8313GS1 Overview
Description
Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Drain; G: Gate; S: Source outline surface mount package.
Key Features
- VDS VGS RDSon TYP 38mR@-4V5 ID
