Datasheet Details
| Part number | SSC8313GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 197.21 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
 SSC8313GS1 Datasheet
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| Part number | SSC8313GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 197.21 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
SSC8313GS1 Datasheet
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Top View D1 D1 D2 D2 This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and S1 G1 S2 G2 low in-line power dissipation are needed in a very small D: Drain; G: Gate; S: Source outline surface mount package.Excellent thermal and electrical capabilities. Package Informat
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