SSC8322GN2 Overview
Description
SSC8322GN2 combines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Package Information Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.3 0.35 I - 0.65 - J - 0.45 - K - 0.15 - L - 0.23 - SSC-1V0 1/4 Analog Future SSC8322GN2 - Parameter Drain-Source Voltage.
