AFSEMI SSC8322GN2
SSC8322GN2 combines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.FEATURES
VDS 20V VGS ±12V RDSon TYP 50mR@4V5 65mR@2V5 ID 4A●
APPLICATIONS
● Li Battery Charging;● DC/DC Converter;
● Load Switch;
● Power Management in Portable, Battery Powered Devices
● Pin Configuration Top View
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GENERAL DESCRIPTION
● Package Information Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.3 0.35 I - 0.65 - J - 0.45 - K - 0.15 - L - 0.23 - SSC-1V0 1/4 Analog Future SSC8322GN2●
ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage