SSC8323GN2 Overview
Description
SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Package Information SSC-1V0 Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.3 0.35 I - 0.65 - J - 0.45 - K - 0.15 - L - 0.23 - 1/5 Analog Future SSC8323GN2 - P.
