Datasheet Details
| Part number | SSC8325GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 198.90 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
 SSC8325GS1 Datasheet
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| Part number | SSC8325GS1 |
|---|---|
| Manufacturer | AFSEMI |
| File Size | 198.90 KB |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Datasheet |
SSC8325GS1 Datasheet
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Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance.This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package.Excellent thermal and D: Drain; G: Gate; S: Source electrical capabilities. Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8
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