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SSC8329GS1 - Dual P-Channel Enhancement Mode MOSFET

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Part number SSC8329GS1
Manufacturer AFSEMI
File Size 594.70 KB
Description Dual P-Channel Enhancement Mode MOSFET
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Description

This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.S1 G1 S2 Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8329GS1 Absolute Maximum Ratings @TA = 25℃ unl

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