AFSEMI SSC8329GS1
This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.| Part No. | SSC8329GS1 |
|---|---|
| Datasheet | SSC8329GS1 Download |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A●
APPLICATIONS
● Load Switch● DCDC conversion
● NB battery
● Pin configuration
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GENERAL DESCRIPTION
S1 G1 S2● Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 1/5 Analog Future SSC8329GS1
ABSOLUTE MAXIMUM RATINGS
@TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD
