| Part number | SSC8329GS1 |
|---|---|
| Datasheet | SSC8329GS1-AFSEMI.pdf |
| File Size | 594.70 KB |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
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This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. S1 G1 S2 Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://.afsemi.
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