SSC8329GS1 Datasheet (AFSEMI)

Part SSC8329GS1
Description Dual P-Channel Enhancement Mode MOSFET
Category MOSFET
Manufacturer AFSEMI
Size 594.70 KB
AFSEMI

SSC8329GS1 Overview

Description

This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection.