AFSEMI SSC8333GS1
This device combines 2 P-Channel enhancement mode power FETs which are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable S1 G1 S2 G2 equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.| Part No. | SSC8333GS1 |
|---|---|
| Datasheet | SSC8333GS1 Download |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
●APPLICATIONS
● TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 61mR@-10V 77mR@-4V5 ID -4.5A● High Side DC/DC Converter
● High Side Driver for Brushless DC Motor
● Portable DVD, DPF
● Pin configuration
●
GENERAL DESCRIPTION
Top View D1 D1 D2 D2● Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 1/4 Analog Future SSC8333GS1
●
ABSOLUTE MAXIMUM RATINGS
@ TA = 25°C unless otherwise noted Parameter Drain-Source V
