SSC8333GS1 Overview
Description
Top View D1 D1 D2 D2 This device combines 2 P-Channel enhancement mode power FETs which are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable S1 G1 S2 G2 equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
