AFSEMI SSC8339GS1
This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch S1 G1 S2 G2 and battery protection.| Part No. | SSC8339GS1 |
|---|---|
| Datasheet | SSC8339GS1 Download |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A●
APPLICATIONS
● Load Switch● DCDC conversion
● NB battery
● Pin configuration
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GENERAL DESCRIPTION
Top View D1 D1 D2 D2● Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SSC-1V0 SOP8 Unit:mm 1/5 Analog Future SSC8339GS1
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ABSOLUTE MAXIMUM RATINGS
@TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID P
