| Part number | SSC8339GS1 |
|---|---|
| Datasheet | SSC8339GS1-AFSEMI.pdf |
| File Size | 320.12 KB |
| Manufacturer | AFSEMI |
| Description | Dual P-Channel Enhancement Mode MOSFET |
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Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch S1 G1 S2 G2 and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SSC-1V0 SOP8 Unit:mm http://.afsemi.
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