SSC8339GS1 - Dual P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	SSC8339GS1
Manufacturer	AFSEMI
File Size	320.12 KB
Description	Dual P-Channel Enhancement Mode MOSFET
Datasheet	SSC8339GS1 Datasheet
Additional preview pages of the SSC8339GS1 datasheet.

Product details

Description

Top View D1 D1 D2 D2 This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch S1 G1 S2 G2 and battery protection. Package Information ⑧ ⑦ ⑥⑤ ①② ③ ④ SSC-1V0 SOP8 Unit:mm http://www.afsemi.com 1/5 Analog Future SSC8339GS1 Absolute Maximum Ratings @TA = 25

Features

s VDS -30V VGS ±20V RDSon TYP 15mR@-10V 20mR@-4V5 ID -10A.

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Published: Dec 15, 2018 |