SSC8362GS1 datasheet by AFSEMI.
| Part number | SSC8362GS1 |
|---|---|
| Datasheet | SSC8362GS1-AFSEMI.pdf |
| File Size | 235.89 KB |
| Manufacturer | AFSEMI |
| Description | Dual N-Channel Enhancement Mode MOSFET |
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This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Package Information Applications Inverter;.
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