SSC8362GS1 Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems. Package Information Applications Inverter;.
SSC8362GS1 Key Features
- General Description
- Package Information