SSC8362GS1
SSC8362GS1 is Dual N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
VDS 60V
VGS ±20V
RDSon TYP 30m R@10V 35m R@4V5
ID 6.5A
- General Description
This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.
- Package Information
- Applications
- Inverter;
- Pin configuration
Top View
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous Total Power Dissipation (note1,2) Operating and Storage Junction Temperature Range Note: 1. Surface Mounted on 1in pad area, t ≤10sec. 2. Rating for a single chip.
Symbol VDSS VGSS ID PD
TJ, TSTG
Ratings...
