SSC8K21GN3
SSC8K21GN3 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
P-MOSFET VDS VGS
-20V ±8V
Schottky VR IR 20V 35u A
RDSon TYP 130m R@-4V5 170m R@-2V5 230m R@-1V8
VF TYP 410Mv@0.5A
ID -2A
IO 1A
- Applications
- Li Battery Charging
- High Side DC/DC Converter
- High Side Driver for Brushless DC Motor
- Power Management in Portable, Battery
Powered Devices
- Pin configuration
Top View
8765 KKDD
- General Description
SSC8K21GN3 bines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.
- Package Information
AASG 12 3 4
SSC-1V0
Package：DFN3x2 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±8
Drain Current (Note 1)
Continuous...
