SSC8K21GN3 - P-Channel Enhancement Mode MOSFET

Product Overview

Datasheet Details

Part number	SSC8K21GN3
Manufacturer	AFSEMI
File Size	537.99 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	SSC8K21GN3 Datasheet
Additional preview pages of the SSC8K21GN3 datasheet.

Product details

Description

SSC8K21GN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. Package Information KD AASG 12 3 4 SSC-1V0 Package：DFN3x2 http://www.afsemi.com 1/5 Analog Future SSC8K21GN3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS

Features

s P-MOSFET VDS VGS -20V ±8V Schottky VR IR 20V 35uA RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8 VF TYP 410Mv@0.5A ID -2A IO 1A.

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Published: Dec 15, 2018 |