SSC8K23GN2
SSC8K23GN2 is P-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
P-MOSFET VDS VGS
RDSon TYP 135m R@-4V5
- Applications
- Bidirectional blocking switch;
- DC-DC conversion applications;
- Li-battery charging;
-20V ±8V Schottky
180m R@-2V5 240m R@-1V8
-2A
- Pin configuration
Top View
VR IR
20V 35u A 410m V@0.5A
- General Description
IO 1A
SSC8K23GN2 bines a P-Channel enhancement mode power MOSFET which is produced with high
KD cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.
A NC D 123
- Package Information ackage:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.95 2 2.08
B 1.95 2 2.08
C 0.5 0.6 0.7
D 0.9 1 1.1
- 0.13
- G 0.2 0.25 0.3
H 0.25 0.3 0.35
- 0.65
- J
- 0.45
- K
-...
