SSC8K23GN2

SSC8K23GN2 Description

IO 1A 654 KG S SSC8K23GN2 bines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption. 1/5 Analog Future SSC8K23GN2 Ratings @TA=25℃ unless otherwise noted.