SSC8K23GN2 Overview
Description
IO 1A 654 KG S SSC8K23GN2 combines a P-Channel enhancement mode power MOSFET which is produced with high KD cell density and DMOS trench technology and a low forward voltage schottky diode. the tiny and thin outline saves PCB consumption.
Key Features
- P-MOSFET VDS VGS RDSon TYP 135mR@-4V5 ID