SSC8P20AN2
SSC8P20AN2 is N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
PNP Transistor
VCE VBE -40V -6V
VCESATMAX -500m V
IC -1.0A
- Applications
- Li Battery Charging
- Pin configuration
- General Description
SSC8P20AN2 bines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP Transistor . The tiny and thin outline saves PCB consumption.
- Package Information
Top View
SSC-1V0 http://.afsemi.
1/5
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage Gate-Source Voltage
VDS 20 VGS ±8
Drain Current (Note 1)
Continuous
ID A
Pulsed
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-6
Collector Current
Collector Pulsed
Power Dissipation Derating above TA = 25°C (Note...
