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SSC8P22AN3 - N-Channel Enhancement Mode MOSFET

General Description

SSC8P22AN3 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP transistor .

The tiny and thin outline saves PCB consumption.

Package Information 1:Collector 2:Emitter 3:Base 4:Drain 5:Gate 6:Source 7:Collector 8:Collector 9:Colle

Key Features

  • s PNP Transistor VCE VBE -40V -6V.

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Datasheet Details

Part number SSC8P22AN3
Manufacturer AFSEMI
File Size 1.17 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8P22AN3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSC8P22AN3 N-Channel Enhancement Mode MOSFET with PNP Transistor  Features PNP Transistor VCE VBE -40V -6V VCESATMAX -200mV IC -3A  Applications  Li Battery Charging  Pin configuration  General Description SSC8P22AN3 combines an N-Channel enhancement mode power MOSFET which is produced with high cell density and a Media Power PNP transistor . The tiny and thin outline saves PCB consumption.  Package Information 1:Collector 2:Emitter 3:Base 4:Drain 5:Gate 6:Source 7:Collector 8:Collector 9:Collector 10:Drain DFN3X2X0.75 SSC-1V0 Symbol A A1 A3 D E D1 E1 D2 b e k L http://www.afsemi.com Dimensions in millimeter MIN. MAX. 0.700 0.800 0.000 0.050 0.203REF. 1.900 2.100 2.900 3.100 0.300 0.500 0.700 0.900 1.700 1.900 0.250 0.350 0.650TYP. 0.200MIN. 0.