• Part: SSC8PN0GN2
  • Description: High Frequency High Gain PNP Power BJT
  • Manufacturer: AFSEMI
  • Size: 545.08 KB
Download SSC8PN0GN2 Datasheet PDF
AFSEMI
SSC8PN0GN2
SSC8PN0GN2 is High Frequency High Gain PNP Power BJT manufactured by AFSEMI.
Features - Applications PNP BJT VCE -40V VBE -6V VCE(SAT) typ -150m V Ic -1A - battery powered circuits - low in-line power dissipation circuits NPN BJT 40V 6V 120m V 0.2A - Pin configuration - General Description SSC8PN0GN2 bines an Power NPN Transistor and a Power PNP Transistor . The tiny and thin outline saves PCB consumption. Pin configuration(Top view) - Package Information SSC-1V0 http://.afsemi. 1/5 Analog Future - Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol NPN Transistor Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current (Note 1) Pulse collector current(Note3) VEBO IC ICM PNP Transistor Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current (Note 1) Pulse collector current(Note3) VEBO IC ICM Power Dissipation (Note...