SSC9926GS1
SSC9926GS1 is Dual N-Channel Enhancement Mode MOSFET manufactured by AFSEMI.
Features
- VDS VGS 20V ±12V
RDSon TYP 21m R@4V5 22m R@3V8 26m R@2V5
ID 6A
- - General Description
This device bines 2 N-channel enhancement mode MOSFETs,which use advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
- Package Information
Applications
- Li-ion battery;
- Load swich;
- Battery charger Pin configuration
Top View
D1 D1 D2 D2
S1 G1 S2 G2
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0 http://.afsemi.
1/4
Analog Future
- Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
±12
Drain Current (Note 1)
ID 6 IDM 30
Total Power Dissipation (Note 1)
PD 800
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1....
