Datasheet4U Logo Datasheet4U.com

AGM042N10C - MOSFET

Description

The AGM042N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

📥 Download Datasheet

Datasheet preview – AGM042N10C

Datasheet Details

Part number AGM042N10C
Manufacturer AGMSEMI
File Size 880.31 KB
Description MOSFET
Datasheet download datasheet AGM042N10C Datasheet
Additional preview pages of the AGM042N10C datasheet.

📁 Similar Datasheet

Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
AGM042N10C ● General Description The AGM042N10C combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 4.1mΩ TO-220 Pin Configuration ID 110A Package Marking and Ordering Information Device Marking Device AGM042N10C AGM042N10C Device Package TO-220 Reel Size ---- Tape width ---- Quantity 1000 Table 1.
Published: |