AGM042N10D - MOSFET

Description

The AGM042N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

📥 Download Datasheet

Datasheet Details

Part number	AGM042N10D
Manufacturer	AGMSEMI
File Size	720.84 KB
Description	MOSFET
Datasheet	AGM042N10D Datasheet
Additional preview pages of the AGM042N10D datasheet.

📁 Similar Datasheet

AGM-12864A-901 - LCD Modules (AGT)
AGM1032A-FLW-FBH - LCD (AZ Displays)
AGM1064B - LIQUID CRYSTAL DISPLAY (AZ Displays)
AGM1212B - LCD MODULE (AZ Displays)
AGM1212C - LCD MODULE (AZ Displays)
AGM1212D - LCD MODULE (AZ Displays)
AGM1212E - LCD MODULE (AZ Displays)
AGM1212I - LCD (AZ Displays)
AGM1212N - LCD (AZ Displays)
AGM1216A - LIQUID CRYSTAL DISPLAY (AZ Displays)

Other Datasheets by AGMSEMI

AGM042N10C - MOSFET
AGM035N10A - MOSFET
AGM035N10C - MOSFET
AGM038N10A - MOSFET
AGM056N10C - MOSFET
AGM056N10H - MOSFET
AGM065N10C - MOSFET
AGM065N10D - MOSFET

Full PDF Text Transcription

Click to expand full text

AGM042N10D ● General Description The AGM042N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 100V RDSON 4.1mΩ TO-252 Pin Configuration ID 110A Package Marking and Ordering Information Device Marking Device AGM042N10D AGM042N10D Device Package TO-252 Reel Size ---- Tape width ---- Quantity 2500 Table 1.

Published: Dec 28, 2024 |