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AGM15N10D-G Datasheet MOSFET

Manufacturer: AGMSEMI

Overview: AGM15N10D-G ● General.

General Description

The AGM15N10D-G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications.

100V 75mΩ 16A ●

Key Features

  • Advance high cell density Trench technology TO-252 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching D.
  • Low Thermal resistance.