AGM15N10D-G Overview
Description
The AGM15N10D-G combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) Product Summary This device is ideal for load switch and battery BVDSS RDSON ID protection applications.
Key Features
- Advance high cell density Trench technology TO-252 - Low RDS(ON) to minimize conductive loss
- Low Gate Charge for fast switching D
