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AGM15N10D - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 100V 85mΩ 15A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance TO-252 Pin Configuration D.

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Datasheet preview – AGM15N10D

Datasheet Details

Part number AGM15N10D
Manufacturer AGMSEMI
File Size 347.84 KB
Description MOSFET
Datasheet download datasheet AGM15N10D Datasheet
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Full PDF Text Transcription

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AGM15N10D ● General Description The AGM15N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 100V 85mΩ 15A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance TO-252 Pin Configuration D ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver DS G Package Marking and Ordering Information Device Marking AGM15N10D Device AGM15N10D Device Package TO-252 Reel Size ---- Tape width ---- Quantity 2500 Table 1.
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