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AGM2N7002 - MOSFET

Datasheet Summary

Description

The AGM2N7002 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM2N7002
Manufacturer AGMSEMI
File Size 517.77 KB
Description MOSFET
Datasheet download datasheet AGM2N7002 Datasheet
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Full PDF Text Transcription

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AGM2N7002 ● General Description The AGM2N7002 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 60V RDSON 0.95 Ω SOT-23 Pin Configuration ID 0.3A Package Marking and Ordering Information Device Marking 7002 Device AGM2N7002 Device Package SOT-23 Reel Size ---- Tape width ---- Quantity 3000 Table 1.
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