Datasheet4U Logo Datasheet4U.com

AGM303AP - MOSFET

Datasheet Summary

Description

to provide extremely low RDS(ON) .

protection applications.

Features

  • Advance high cell density Trench technology PDFN3.3.
  • 3.3 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

📥 Download Datasheet

Datasheet preview – AGM303AP

Datasheet Details

Part number AGM303AP
Manufacturer AGMSEMI
File Size 0.97 MB
Description MOSFET
Datasheet download datasheet AGM303AP Datasheet
Additional preview pages of the AGM303AP datasheet.
Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
AGM303AP ● General Description The AGM303AP combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery BVDSS RDSON ID protection applications. 30V 2.8mΩ 90A ● Features ■ Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM303AP Device AGM303AP Device Package PDFN3.3*3.3 Reel Size 330mm Tape width 12mm Quantity 5000 Table 1.
Published: |