AGM308AP - MOSFET

Datasheet Summary

Description

extremely low RDS(ON) .

protection applications.

Features

PDFN3.
3 Pin Configuration.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM308AP
Manufacturer	AGMSEMI
File Size	827.98 KB
Description	MOSFET
Datasheet	AGM308AP Datasheet
Additional preview pages of the AGM308AP datasheet.

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Full PDF Text Transcription

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AGM308AP ● General Description The AGM308AP combines advanced trench MOSFET Product Summary technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery 30V 7.2mΩ 40A protection applications. ● Features PDFN3*3 Pin Configuration ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM308AP Device AGM308AP Device Package PDFN3*3 Reel Size ---- Tape width ---- Quantity 5000 Table 1.

Published: Dec 28, 2024 |