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AGM308MN - MOSFET

Datasheet Summary

Description

The AGM308MN combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM308MN
Manufacturer AGMSEMI
File Size 1.06 MB
Description MOSFET
Datasheet download datasheet AGM308MN Datasheet
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● General Description The AGM308MN combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 30V RDSON 8.8mΩ SOP-8 Pin Configuration S1 G1 S2 G2 D1 D1 D2 D2 AGM308MN ID 15A Package Marking and Ordering Information Device Marking AGM308MN Device AGM308MN Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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