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AGM307MNQ - MOSFET

Datasheet Summary

Description

The AGM307MNQ combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s BVDSS RDSON ID 30V 7.5mΩ 42A.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching WQFN5.
  • 6 Pin Configuration.
  • Low Thermal resistance.

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Datasheet Details

Part number AGM307MNQ
Manufacturer AGMSEMI
File Size 713.05 KB
Description MOSFET
Datasheet download datasheet AGM307MNQ Datasheet
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AGM307MNQ ● General Description The AGM307MNQ combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features BVDSS RDSON ID 30V 7.5mΩ 42A ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching WQFN5*6 Pin Configuration ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier S1/DD21 ■ POL application ■ BLDC Motor driver PIN1 Package Marking and Ordering Information Device Marking AGM307MNQ Device AGM307MNQ Device Package WQFN5*6 Reel Size ---- Tape width ---- Quantity 3000 Table 1.
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