AGM30P100A - MOSFET

Datasheet Summary

Description

The AGM30P100A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM30P100A
Manufacturer	AGMSEMI
File Size	741.50 KB
Description	MOSFET
Datasheet	AGM30P100A Datasheet
Additional preview pages of the AGM30P100A datasheet.

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Full PDF Text Transcription

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AGM30P100A ● General Description The AGM30P100A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Product Summary BVDSS -30V RDSON 3.7mΩ PDFN5*6 Pin Configuration ID -128A Device Marking AGM30P100A Device AGM30P100A Device Package PDFN5*6 Reel Size ---- Tape width ---- Quantity 3000 Table 1.

Published: Dec 28, 2024 |