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AGM30P100D - MOSFET

Datasheet Summary

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet preview – AGM30P100D

Datasheet Details

Part number AGM30P100D
Manufacturer AGMSEMI
File Size 904.73 KB
Description MOSFET
Datasheet download datasheet AGM30P100D Datasheet
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Full PDF Text Transcription

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AGM30P100D ● General Description The AGM30P100D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -30V RDSON 3.7mΩ TO-252 Pin Configuration ID -128A Package Marking and Ordering Information Device Marking AGM30P100D Device AGM30P100D Device Package TO-252 Reel Size 330mm Table 1.
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