Datasheet4U Logo Datasheet4U.com

AGM30P16S - MOSFET

Datasheet Summary

Description

The AGM30P16S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

📥 Download Datasheet

Datasheet preview – AGM30P16S

Datasheet Details

Part number AGM30P16S
Manufacturer AGMSEMI
File Size 1.02 MB
Description MOSFET
Datasheet download datasheet AGM30P16S Datasheet
Additional preview pages of the AGM30P16S datasheet.

📁 Similar Datasheet

Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
AGM30P16S ● General Description The AGM30P16S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Product Summary BVDSS -30V RDSON 17mΩ SOP8 Pin Configuration ID -10A Device Marking Device AGM30P16S AGM30P16S Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
Published: |