AGM30P16D - MOSFET

Datasheet Summary

Description

The AGM30P16D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductiveloss.
Low Gate Charge for fast switching.
Low Thermal resistance.

AGMSEMI

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Datasheet Details

Part number	AGM30P16D
Manufacturer	AGMSEMI
File Size	804.84 KB
Description	MOSFET
Datasheet	AGM30P16D Datasheet
Additional preview pages of the AGM30P16D datasheet.

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Full PDF Text Transcription

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AGM30P16D ● General Description The AGM30P16D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductiveloss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -30V RDSON 16.8mΩ TO-252 Pin Configuration D DS G ID -25A Package Marking and Ordering Information Device Marking AGM30P16D Device AGM30P16D Device Package TO-252 Reel Size 330mm Table 1.

Published: Dec 28, 2024 |