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AGM30P18S - MOSFET

Datasheet Summary

Description

The AGM30P18S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

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Datasheet Details

Part number AGM30P18S
Manufacturer AGMSEMI
File Size 671.01 KB
Description MOSFET
Datasheet download datasheet AGM30P18S Datasheet
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AGM30P18S ● General Description The AGM30P18S combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Product Summary BVDSS -30V RDSON 7.0mΩ SOP8 Pin Configuration ID -17A Device Marking Device AGM30P18S AGM30P18S Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.
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