AGMSEMI AGM30P25D
The AGM30P25D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.| Part No. | AGM30P25D |
|---|---|
| Datasheet | AGM30P25D Download |
| Manufacturer |  AGMSEMI |
| Description | MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
●FEATURES
● Advance high cell density Trench technology● Low RDS(ON) to minimize conductive loss
●Low Gate Charge for fast switching
●Low Thermal resistance
●100% Avalanche tested
●100% DVDS tested
● Application
●MB/VGA Vcore
●SMPS 2nd Synchronous Rectifier
●POL application
●BLDC Motor driver Product Summary BVDSS -30V RDSON 21mΩ TO-252 Pin Configuration ID -12A Package Marking and Ordering Information Device Marking AGM30P25D Device AGM30P25D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
ABSOLUTE MAXIMUM RATINGS
(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous(Tc=25℃) (Note 1) Drain Current-Continuous(Tc=100℃) Drain Current-Pulsed (Note 2) PD EAS TJ,TSTG Maximum Power Dissipation(Tc=25℃) Maximum Power Dissipation(Tc=100℃) Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Table 2. Thermal Characteristic Symbol Parameter RθJA T...
