AGM30P25S - MOSFET

Datasheet Summary

Description

package to provide extremely low RDS(ON) .

protection applications.

Features

SOP8 Pin Configuration.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

AGMSEMI

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Datasheet Details

Part number	AGM30P25S
Manufacturer	AGMSEMI
File Size	1.42 MB
Description	MOSFET
Datasheet	AGM30P25S Datasheet
Additional preview pages of the AGM30P25S datasheet.

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Full PDF Text Transcription

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AGM30P25S ● General Description The AGM30P25S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . BVDSS RDSON ID This device is ideal for load switch and battery -30V 20mΩ -8A protection applications. ● Features SOP8 Pin Configuration ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ■100% Avalanche tested ■100% DVDS tested ● Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM30P25S Device AGM30P25S Device Package SOP8 Reel Size 330mm Tape width 12mm Quantity 3000 Table 1.

Published: Dec 28, 2024 |