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AGM403A1 - MOSFET

Description

MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • Advance high cell density Trench technology PRPAK5X6 Pin Configuration.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

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Datasheet preview – AGM403A1

Datasheet Details

Part number AGM403A1
Manufacturer AGMSEMI
File Size 1.46 MB
Description MOSFET
Datasheet download datasheet AGM403A1 Datasheet
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Full PDF Text Transcription

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AGM403A1 ● General Description The AGM403A1 combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. BVDSS 40V RDSON 2.7mΩ ID 120A ● Features ■ Advance high cell density Trench technology PRPAK5X6 Pin Configuration ■Low RDS(ON) to minimize conductive loss ■Low Gate Charge for fast switching ■Low Thermal resistance ●Application ■MB/VGA Vcore ■SMPS 2nd Synchronous Rectifier ■POL application ■BLDC Motor driver Package Marking and Ordering Information Device Marking AGM403A1 Device AGM403A1 Device Package PDFN5*6 Reel Size 325mm Tape width 16mm Quantity 3000 Table 1.
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