AGM403DG - MOSFET

Description

The AGM403DG combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

s.
Advance high cell density Trench technology.
Low RDS(ON) to minimize conductive loss.
Low Gate Charge for fast switching.
Low Thermal resistance.
100% Avalanche tested.
100% DVDS tested.

AGMSEMI

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Datasheet Details

Part number	AGM403DG
Manufacturer	AGMSEMI
File Size	916.43 KB
Description	MOSFET
Datasheet	AGM403DG Datasheet
Additional preview pages of the AGM403DG datasheet.

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Full PDF Text Transcription

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AGM403DG ● General Description The AGM403DG combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS 40V RDSON 3.0mΩ TO-252 Pin Configuration D DS G ID 101A Package Marking and Ordering Information Device Marking AGM403DG Device AGM403DG Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.

Published: Dec 28, 2024 |