Datasheet4U Logo Datasheet4U.com

AGM40P30AP - MOSFET

Description

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching.
  • Low Thermal resistance.

📥 Download Datasheet

Datasheet preview – AGM40P30AP

Datasheet Details

Part number AGM40P30AP
Manufacturer AGMSEMI
File Size 804.70 KB
Description MOSFET
Datasheet download datasheet AGM40P30AP Datasheet
Additional preview pages of the AGM40P30AP datasheet.
Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
● General Description The AGM40P30AP combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Product Summary BVDSS -40V RDSON 26mΩ PDFN3.3*3.3 Pin Configuration AGM40P30AP ID -33A Package Marking and Ordering Information Device Marking Device AGM40P30AP AGM40P30AP Device Package PDFN3.3*3.3 Reel Size 330mm Table 1.
Published: |